Charge for vertical boat growth process and use thereof

Details Charge for vertical boat growth process and use thereof Charge for vertical boat growth process and use thereof

1997-11-21

2000-04-04

Hiteshew, Felisa

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

117 81, 117 83, 252 633GA, C01B 3326

Patent

active

060457678

ABSTRACT:
In vertical boat growth of GaAs single crystal ingots, graphite powder, in selected amounts, is included in the charge to establish directly related planned target electrical characteristics in the as grown ingots. The electrical characteristics correspond to concentrations of carbon in the as grown ingots.

REFERENCES:
patent: 4999082 (1991-03-01), Kremer et al.
patent: 5342475 (1994-08-01), Yoshida et al.
patent: 5454346 (1995-10-01), Uchida et al.
"Low-Dislocation-Density and Low-Residual-Strain Semi-Insulating GaAs Grown by Vertical Boat Method", Kawase, et al; 1996 IEEE Semi-Conducting and Semi-Insulating Materials Conference; Apr. 29, May 2/3, 1996 pp. 275-278.
"Semiconducting Gallium Argenide Single Crystals"; Yamamoto, et al., Japan, Kokai Tokkyo Koho, 5 pgs. (Abstract only), 1989.

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