Charge effects in doped silicon dioxide

Details Charge effects in doped silicon dioxide Charge effects in doped silicon dioxide

1975-07-07

1976-03-16

Miller, Jr., Stanley D.

357 52, H01L 2978, H01L 2934

Patent

active

039450317

ABSTRACT:
Charge conditions are modified in a wafer including a silicon dioxide layer on a silicon substrate by introducing a distribution of tantalum into the silicon dioxide layer. The distribution of tantalum can be adapted to store negative charge, to getter sodium or to produce nonannealable fast surface states. A distribution of tantalum at the silicon-silicon dioxide interface produces nonannealable fast surface states. A distribution of tantalum in the silicon dioxide subjected to electrical and temperature stress can store negative charge and getter sodium. An n-channel insulated gate field effect transistor utilizes a silicon dioxide gate insulator which includes centrally located therein a region which is rich in treated tantalum.

REFERENCES:
patent: 3882530 (1975-05-01), Danchenko

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