Charge effect transistor and a method for manufacturing the same

Details Charge effect transistor and a method for manufacturing the same Charge effect transistor and a method for manufacturing the same

1998-08-20

1999-08-24

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

257256, 257261, 257902, H01L 2947

Patent

active

059427906

ABSTRACT:
A new conceptional transistor and a method for manufacturing, which increases the integration of semiconductor devices using conventional MOS devices are provided. The present invention provides a transistor in which a structure of metal-insulator film-metal dot-metal (MIMIM), metal-insulator film-metal dot-semiconductor (MIMS), or semiconductor-metal dot-semiconductor (SMS) is formed, using junction of electrodes operating as a source and a drain having a metal dot of nm therebetween, and the current flow between source and drain is controlled by controlling tunneling and Schottky barrier formed between the source and the metal dot using the method of controlling electrical potential of metal dot through charging effect of gate electrode isolated by a thick insulator.

REFERENCES:
patent: 4631563 (1986-12-01), Iizuka
patent: 4647954 (1987-03-01), Graf et al.
patent: 4691215 (1987-09-01), Luryi
patent: 5049953 (1991-09-01), Mihara et al.
patent: 5428234 (1995-06-01), Sumi
patent: 5705827 (1998-01-01), Baba et al.

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