Charge domain synapse cell

Details Charge domain synapse cell Charge domain synapse cell

1991-08-20

1992-08-04

Mis, David

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

364807, H03K 1900

Patent

active

051361760

ABSTRACT:
A semiconductor charge domain synapse cell has a capacitor coupled between an input line and an intermediate node. A high-to-low voltage transition applied to the input line causes charge transfer from one summing line to the intermediate node through a first device having a programmable threshold. A second device then transfers the charge from the intermediate node to another summing line in response to the next low-to-high transition of the input. The amount of charge transferred is proportional the amplitude of the pulsed input, the programmed voltage threshold, and the capacitance value.

REFERENCES:
patent: 5028810 (1991-07-01), Castro et al.

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