Charge detecting device

Details Charge detecting device Charge detecting device

1993-08-27

1994-10-18

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257224, 377 60, H01L 29796, G11C 1928

Patent

active

053571282

ABSTRACT:
A charge detecting device in which a buried type charge sensing channel and a surface type floating surface channel crossing with the charge sensing channel in three-dimensional, the floating surface channel having a surface potential varying depending on a charge amount of the charge sensing channel, the device being characterized by a surface channel region disposed on the charge sensing channel, surface channel the region having a conductivity opposite to that of the charge sensing channel. A surface-invertible buried channel isolation region is disposed between the charge sensing channel and each of a source and a drain both formed on either side of the floating surface channel. Carriers of the floating surface channel and the charge sensing channel correspond to electrons of the same polarity. With this structure, there is no problem of dark current. Also, a short noise caused by dark noise is reduced, thereby enabling a high sensitivity to be obtained.

REFERENCES:
patent: 4074302 (1978-02-01), Brewer
patent: 4672645 (1987-06-01), Bluzer
patent: 4984045 (1991-01-01), Matsunaga
patent: 5223725 (1993-06-01), Miwada
patent: 5229630 (1993-07-01), Hamasaki

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