Charge density detector for beam implantation

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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H01J 3700

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active

046755306

ABSTRACT:
Apparatus for accurately measuring the charge distribution, and hence the voltage, on a non-conducting workpiece during ion bombardment. The invention is based on the principal that the charge on the surface of the workpiece induces equal and opposite charge on the surface of an isolated proof plane conductor placed in front of it. A workpiece is moved at a known speed in front of the proof plane, whose dimensions are small compared to the workpiece. The measurement of the time distribution of the induced charge on the proof plane is a measure of the spatial distribution of the charge on the bombarded workpiece. The proof plane surface is isolated from currents which might flow directly to its surface. The invention has utility for several purposes important to the semiconductor industry: monitoring the surface voltage distribution on a given workpiece during ion bombardment; certification to the device user that the workpiece was implanted under specified values or limits of surface voltage distribution; control of the surface charge distribution on the workpiece through the feedback of the charge-measurement signal to a device which compensates the charge on the workpiece.

REFERENCES:
patent: 3507709 (1970-04-01), Bower
patent: 4118630 (1978-10-01), McKenna et al.
patent: 4228358 (1980-10-01), Ryding
patent: 4234797 (1980-11-01), Ryding
patent: 4249077 (1981-02-01), Crawford
patent: 4419584 (1983-12-01), Benveniste
patent: 4463255 (1984-07-01), Robertson et al.
A New Dose Control Technique for Ion Implantation--Ryding et al.
The Effect of Ion Implanter Design Upon Implant Uniformity--Wittkower.

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