Charge damage free implantation by introduction of a thin conduc

Details Charge damage free implantation by introduction of a thin conduc Charge damage free implantation by introduction of a thin conduc

1993-01-22

1995-01-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 43, H01L 21265

Patent

active

053842685

ABSTRACT:
A method is described for fabricating an integrated circuit in which the gate electrodes and gate dielectric silicon oxide are protected from electrical charge damage during ion implantation. A thin conducting layer is deposited over the pattern of gate electrodes/gate dielectric silicon oxide wherein the conducting layer is grounded to the silicon substrate. The high-dose ion implantation is applied through the conducting layer which layer grounds the electrical charge resulting from the ion implantation, and hence protects the gate electrodes from charge damage. The electron "flood gun" need not be used.

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Wolf et al, Silicon Procesing for the VLSI Era, Lattice Press, 1990.

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