Charge-coupled semiconductor device having an improved electrode

Details Charge-coupled semiconductor device having an improved electrode Charge-coupled semiconductor device having an improved electrode

1989-07-27

1990-03-06

James, Andrew J.

357 55, 357 67, 357 71, H01L 2978, H01L 2906, H01L 2348

Patent

active

049070495

ABSTRACT:
A charge-coupled semiconductor device has a plurality of silicon electrodes for storing and transporting information-carrying charge, which electrodes are located on an insulating layer and are mutually separated by grooves having a width of at most 1 .mu.m. According to the invention, transfer electrodes are arranged in the grooves, these electrodes being coplanar with the remaining electrodes. The thickness of the insulating layer under the transfer electrodes is substantially equal to that under the storage electrodes. The invention also relates to a method of manufacturing a semiconductor device having such an electrode system.

REFERENCES:
patent: 4053349 (1977-10-01), Simko
patent: 4055885 (1977-11-01), Takemoto
patent: 4358340 (1982-11-01), Fu
patent: 4449287 (1984-05-01), Maas et al.
patent: 4636826 (1987-01-01), Slotboom et al.

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