Patent
1989-07-27
1990-03-06
James, Andrew J.
357 55, 357 67, 357 71, H01L 2978, H01L 2906, H01L 2348
Patent
active
049070495
ABSTRACT:
A charge-coupled semiconductor device has a plurality of silicon electrodes for storing and transporting information-carrying charge, which electrodes are located on an insulating layer and are mutually separated by grooves having a width of at most 1 .mu.m. According to the invention, transfer electrodes are arranged in the grooves, these electrodes being coplanar with the remaining electrodes. The thickness of the insulating layer under the transfer electrodes is substantially equal to that under the storage electrodes. The invention also relates to a method of manufacturing a semiconductor device having such an electrode system.
REFERENCES:
patent: 4053349 (1977-10-01), Simko
patent: 4055885 (1977-11-01), Takemoto
patent: 4358340 (1982-11-01), Fu
patent: 4449287 (1984-05-01), Maas et al.
patent: 4636826 (1987-01-01), Slotboom et al.
Davids Geert J. T.
Maas Henricus G. R.
Osinki Kazimierz
Slotboom Jan W.
Biren Steven R.
James Andrew J.
Ngo Ngan Van
U.S. Philips Corp.
LandOfFree
Charge-coupled semiconductor device having an improved electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Charge-coupled semiconductor device having an improved electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge-coupled semiconductor device having an improved electrode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-51337