Charge coupled imaging device having multilayer gate electrode w

Details Charge coupled imaging device having multilayer gate electrode w Charge coupled imaging device having multilayer gate electrode w

1994-05-20

1995-09-12

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257220, 257221, 257241, 257246, 257247, 257250, H01L 2978, H01L 2714, H01L 3100

Patent

active

054499313

ABSTRACT:
In charge coupled imaging devices, a major portion of the photosensitive surface area is covered by electrodes with which the charge storage and the charge transport in the semiconductor body are controlled. These electrodes are preferably made of polycrystalline silicon. This material, however, like other conductive materials known per se, has a comparatively high absorption coefficient, in particular in the short-wave portion of the visible spectrum (blue), which adversely affects the sensitivity. According to the invention, the electrodes are manufactured partly from a very thin poly layer, preferably not thicker than 50 nm, and partly from a less transparent but higher conductivity layer, for example, poly of much greater thickness. The electrodes are so provided that the major portion of the surface area is covered by the thin, transparent layer and only a comparatively small portion by the less transparent, thick poly layer, parts of the latter being in addition used for the electrical connection of the electrodes made from the very thin poly.

REFERENCES:
patent: 3890633 (1975-06-01), Kosonocky
patent: 4012459 (1977-03-01), Takeya et al.
patent: 5365092 (1994-11-01), Janesick

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