Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
1999-11-18
2002-06-11
Flynn, Nathan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S225000, C438S075000, C438S144000
Reexamination Certificate
active
06403993
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to the formation of electrodes within charge coupled devices, and more particularly, to the formation of non-overlapping electrodes within charge coupled devices.
BACKGROUND OF THE INVENTION
Solid state image sensors are very commonly based charge coupled device (CCD) technology, and are generally classified into either interline transfer type or frame transfer type. The CCD image sensing device is typically an array of closely spaced gates composed of polycrystalline silicon (polysilicon). Polysilicon has been a material of choice due to the ease with which a reliable thin insulating layer may be produced to insulate the separate gates from one another. In operation of frame transfer type imagers, incident light must pass through the gate electrodes and be absorbed by the underlying silicon. Thus, it is desired that these gates be transparent to a broad spectrum of wavelengths of light, and in particular to be transparent to shorter wavelengths, for example, shorter than 450 nm wavelength. Polysilicon gates are not suitable for high transmission in this wavelength range. Hence, devices utilizing more transparent conducting materials, typically composed of conducting oxide materials such as indium-tin-oxide (ITO), have been proposed. For purposes of this disclosure, the term ITO is to be understood to include other conducting materials, as well.
In the prior art as taught by Losee, in U.S. Pat. No. 5,891,752, a method for constructing a CCD image sensor with all ITO gates is proposed. In that device, however, the ITO gates are subjected to chemical mechanical polishing (CMP) to achieve the required electrical isolation between adjacent gates. This CMP process can be non-uniform over widely spaced regions and, hence, devices so produced have some variation in ITO thickness from one area of the device to another. Due to the relatively high index of refraction of the ITO material, this thickness variation results in variation in the relative amount of light which reaches the silicon substrate, and hence, produces a spatial variation in the relative sensitivity of the device. For improved optical response, it is desirable to employ relatively thin ITO for the gates, for example, using thicknesses less than 100 nm. With decreasing ITO gate thickness, the variation in thickness caused by the CMP process causes stronger variation in the relative sensitivity of the device.
Another concern with the polished structure, particularly when thin ITO gates are desired, is due to fixed electrostatic charges which inevitably occur in overlying insulating layers of the device. Such fixed charge will cause small potential variations, usually as regions of increased electrostatic potential, immediately below the insulating gap between the CCD electrodes. This is illustrated in
FIG. 1
a
. In this figure, electrostatic potential contours are indicated, and if seen that a potential well, or pocket, appears in the region beneath the electrode gap. The depth of this well depends on both the gate electrode separation and the placement and magnitude of the fixed insulator charge. Such a potential well can introduce charge transfer inefficiency, an undesirable property, in the operation of the CCD shift register.
From the foregoing it should be apparent that there remains a need in the art for a method of producing a more uniform gate thickness in frame transfer CCD images sensors, this is especially true when the gates are composed of ITO. It should also be apparent that there remains a problem of reducing the effect of fixed charges which may be present in overlaying insulating layers. Such fixed charges can result in undesirable potential wells or barriers in the underlying silicon substrate, which, in turn, can lead to charge transfer inefficiency. These and other problems within the prior art are addressed by the present invention.
SUMMARY OF THE INVENTION
The present invention addresses the problem of producing a more uniform gate thickness in frame transfer CCD images sensors with all gates composed of ITO. It also addresses the problem of reducing the effect of fixed charges which may be present in overlaying insulating layers. Such fixed charges can result in undesirable potential wells or barriers in the underlying silicon substrate, which, in turn, can lead to charge transfer inefficiency. A device and method of manufacture are disclosed wherein the gate electrodes are of a substantially U-shaped geometry, which effectively shields the charge transfer channel from the effects of the fixed charge and wherein the gate electrode material, for example, ITO, is of improved optical uniformity.
The present invention discloses a CCD based image sensing device with non-overlapping gates wherein the gates have a vertical conducting section at their edges. With such vertical edge sections present, the deleterious effects of the fixed insulator charges in the upper layers of the CCD are electrostatically shielded, such shielding resulting in a reduced channel potential well between the gates. Such a shielding effect is shown in the calculated potential profile of the CCD channel in
FIG. 1
a
and
FIG. 1
b
. In
FIG. 1
a
, the gate electrode thickness is thinner than the space between the electrodes. For purposes of this illustration, the voltages on the two gates in the figure are equal. It is seen that a potential non-uniformity exists in the gap between the gate electrodes. This is indicated by the presence of the oval shaped contour in the center of the figure. In
FIG. 1
b
, the gate electrodes are provided with vertical edge regions which act to partially shield the substrate from the effect of the fixed charge and the potential well is reduced. Comparing
FIG. 1
b
with
FIG. 1
a
, the gate electrode thickness remains the same as in
FIG. 1
a
, and thus the optical characteristics are substantially the same for the two devices. The general form of the gate structure, in cross-section, with such vertical edges is thus U-shaped. In
FIG. 1
c
, a more extended cross-sectional diagram of a CCD structure is shown.
ADVANTAGES OF THE PRESENT INVENTION
The present invention has the advantage that a CMP process does not touch the horizontal surfaces of ITO gates (polysilicon) which in turn eliminates non-uniformity in the gate that typically results from the CMP process. The present invention provides vertical sections between the individual gates which act as an electrostatic shield resulting in only small potential wells occurring between the gates. This also simplifies the polishing process. These advantages are obtained without requiring any additional steps.
REFERENCES:
patent: 5086010 (1992-02-01), Kimura
patent: 5516716 (1996-05-01), Hawkins et al.
patent: 405029599 (1993-02-01), None
America William G.
Losee David L.
Eastman Kodak Company
Flynn Nathan
Watkins Peyton C.
Wilson Scott R.
LandOfFree
Charge coupled image sensor with u-shaped gates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Charge coupled image sensor with u-shaped gates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge coupled image sensor with u-shaped gates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2981367