Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2007-05-01
2007-05-01
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185080, C365S185140, C365S185180, C365S185270, C257S318000, C257S320000, C257S322000, C257SE21421
Reexamination Certificate
active
10482682
ABSTRACT:
This invention provides a semiconductor memory device and a corresponding method of operation. The semiconductor memory device comprises a semiconductor substrate having a first conductivity; a plurality of gate structures for storing charge in a non-volatile manner regularly arranged in above the surface of the semiconductor substrate and electrically isolated therefrom; a plurality of wordlines, each of the gate structures being connected to one of the wordlines and a group of the gate structures being connected to a common wordline; and a plurality of active regions, each of the active regions being individually connectable to at least one of the gate structures.
REFERENCES:
patent: 4040017 (1977-08-01), Lee
patent: 4230954 (1980-10-01), Heller
patent: 5606527 (1997-02-01), Kwack et al.
patent: 5706241 (1998-01-01), Nakamura et al.
patent: 6411548 (2002-06-01), Sakui et al.
patent: 6418052 (2002-07-01), Shibata et al.
patent: 6812521 (2004-11-01), He et al.
patent: 2002/0097596 (2002-07-01), Atsumi et al.
patent: 2002/0127798 (2002-09-01), Prall
patent: 2004/0202021 (2004-10-01), Atti et al.
patent: 24 34 936 (1976-02-01), None
patent: 57005362 (1982-01-01), None
S.K. Lahiri, “MNOS/Floating-Gate Charge Coupled Devices for High Density EEPROMS: A New Concept,” Physics of Semiconductor Devices, vol. 3316, No. 2, pp. 951-956, XP001035171.
Patent Abstracts of Japan, vol. 006, No. 064, Apr. 23, 1982, & JP 57 005362 A, Jan. 12, 1982, Abstract.
Atti Massimo
Deml Christoph
Morrison & Foerster / LLP
Pham Ly Duy
Zarabian Amir
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