Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1997-04-28
1999-05-04
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257432, H01L 27148, H01L 29768
Patent
active
059006552
ABSTRACT:
A charge coupled device and a method of manufacturing a charged coupled device includes a semiconductor substrate, a plurality of photoelectrical conversion cells formed in the semiconductor substrate in a matrix form, a plurality of vertical charge coupled device regions formed between the plurality of photoelectrical conversion cells, a plurality of stripe layers formed on the semiconductor substrate and corresponding to the plurality of vertical charge coupled device regions, and a plurality of microlenses formed on the semiconductor substrate and corresponding to the plurality of photoelectrical conversion cells.
REFERENCES:
patent: 5321297 (1994-06-01), Enomoto
patent: 5371397 (1994-12-01), Maegawa et al.
patent: 5422285 (1995-06-01), Ishibe
patent: 5479049 (1995-12-01), Aoki et al.
patent: 5493143 (1996-02-01), Hokari
patent: 5514888 (1996-05-01), Shno et al.
patent: 5534720 (1996-07-01), Song et al.
patent: 5621461 (1997-04-01), Higashide
patent: 5691548 (1997-11-01), Akro
LG Semicon Co, Ltd.
Ngo Ngan V.
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