Charge coupled device with reduced surface state at semiconducto

Details Charge coupled device with reduced surface state at semiconducto Charge coupled device with reduced surface state at semiconducto

1988-08-29

1989-10-03

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

357 30, 357 52, 357 63, 377 58, H01L 2978, H01L 29167, H01L 2714, G11C 1928

Patent

active

048720437

ABSTRACT:
To reduce the dark current to be produced in a semiconductor charge-coupled device, the device is fabricated by preparing a layer of a doped semiconductor having an insulator layer thereon, forming a plurality of transfer electrodes on said insulator layer, and reducing the surface state at the interface between said semiconductor layer and said insulator layer at lease over its areas underlying the transfer electrodes.

REFERENCES:
patent: 3726719 (1973-04-01), Brack et al.
patent: 4151011 (1979-04-01), Mihashi et al.
patent: 4210922 (1980-07-01), Shannon
patent: 4240843 (1980-12-01), Celler et al.
patent: 4328432 (1982-05-01), Yamazaki
patent: 4392011 (1983-07-01), Pankove et al.
patent: 4485315 (1984-11-01), Collet et al.
patent: 4649408 (1987-03-01), Sekine et al.
patent: 4742381 (1988-05-01), Fujii
Anolick et al "Reduction of Alpha Radiation Impact on CCD Memories" IBM Technical Disclosure Bulletin vol. 22 (11/79) p. 2355.

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