Charge-coupled device with open gate structure

Details Charge-coupled device with open gate structure Charge-coupled device with open gate structure

1993-03-16

1994-08-16

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257222, 257224, 257231, 257241, 257243, H01L 2978, H01L 2714, H01L 3100

Patent

active

053389484

ABSTRACT:
The light gathering capability or quantum efficiency of a charge-coupled device is improved by the configuration of the multi-phase gate structure to leave large surface areas of the semiconductor substrate uncovered. Each of the electrodes of the multi-phase gate structure is configured as a series of shallow H-shaped geometries, only the vertical elements of which overlap to ensure that multi-phase operation can be achieved.

REFERENCES:
patent: 3961355 (1976-06-01), Abbas et al.
patent: 4663771 (1987-05-01), Takeshota et al.
patent: 4757365 (1988-07-01), Bondewijns
patent: 4805026 (1989-02-01), Oda
patent: 4970567 (1990-11-01), Ahlgren et al.
patent: 5043819 (1991-08-01), Cheon et al.

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