Charge coupled device with microlens

Details Charge coupled device with microlens Charge coupled device with microlens

1995-08-10

1997-12-02

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257432, 257466, H01L 27148, H01L 29768, H01L 310232, H01L 310352

Patent

active

056939671

ABSTRACT:
A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain formed on the convex portion of the substrate and having a convex top surface; a second conductivity-type high-concentration impurity area formed on the top surface of the light detecting domain; a gate insulating layer formed on the substrate excluding the light detecting domain; a transmission gate formed on the gate insulating layer; a planarization layer formed on the substrate including the transmission gate; and a microlens formed on the planarization layer above a photodiode.

REFERENCES:
patent: 4694185 (1987-09-01), Weiss
patent: 5118924 (1992-06-01), Mehra et al.
patent: 5306926 (1994-04-01), Yonemoto
patent: 5371397 (1994-12-01), Maegawa et al.
patent: 5479049 (1995-12-01), Aoki et al.
patent: 5514888 (1996-05-01), Sano et al.
patent: 5583354 (1996-12-01), Ishibe

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