Charge-coupled device with focused ion beam fabrication

Details Charge-coupled device with focused ion beam fabrication Charge-coupled device with focused ion beam fabrication

1989-10-23

1990-10-30

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

357 91, 377 58, H01L 2978, G11C 1928

Patent

active

049672509

ABSTRACT:
A charge-coupled device (CCD) is provided with a dopant implant gradient, lateral channel stops and blocking implants by means of a focused ion beam (FIB). The FIB is repeatedly scanned across each cell of the CCD as a succession of overlapping but discrete implant scans. The doping levels of the FIB implants accumulate to a stepwise approximation of a desired dopant density profile, the widths of the steps being no greater than about half the widths of the discrete FIB implants. With a FIB pixel of about 750-1,500 Angstroms, the widths of the steps are preferably about 250-500 Angstroms; the dimension of the cells in the dopant gradient direction can be made less than about 5 microns. The lateral channel stops and back blocking implants can be as narrow as single FIB pixel widths, thus freeing up more of the cell for charge carrying capacity.

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Microelectronic Engineering, vol. 4, No. 4, 1986 (North-Holland, Amsterdam, NL), MIJ Beale et al.: "Focused Ion Beams for Lithography and Direct Doping in VLSI Device Fabrication," pp. 233-249, See Paragraphs 2,4.
Journal of Vacuum Science and Technology, vol. 19, No. 1, May-Jun. 1981, (New York, US), V. Wang et al.: "A Mass-Separating Focused-Ion-Beam System for Maskless Ion Implantation," See pp. 1158-1163.
Reuss et al., "Vertical NPN Transistors by Maskless Boron Implantation" J. Vacuum Science and Technology vol. B3 (Jan./Feb. 1985), pp. 62-66.

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