Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-06-26
1997-08-05
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257432, 257644, H01L 27148
Patent
active
056545657
ABSTRACT:
A solid state image picking-up device such as a charge coupled device (CCD) includes a channel region and a photo-diode region formed on a semiconductor region apart from each other, a first insulating film formed on the semiconductor region including the channel region and the second semiconductor region to have a concave portion above the photo-diode region, and a charge transfer electrode interposed in said first insulating film and extending over the channel region and a region between the channel region and the photo-diode region. A light shielding film is formed on the first insulating film over the channel region and a second insulating film is formed on the light shielding film and the first insulating film. A protection film composed of BPSG or PSG is formed to fill the concave portion on the second insulating film. A third insulating film is formed on the protection film and a flattening resin film is formed on the third insulating film. The protection film is formed of a BPSG film containing P.sub.2 O.sub.5 and B.sub.2 O.sub.3 with the total density of 5 mol % or above or a PSG film containing P.sub.2 O.sub.5 with the density of 5 mol % or above.
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Proceedings of Spring Conference of the Applied Physics Society in Japan, No. 29p-D-9, 1985.
Hardy David B.
NEC Corporation
Thomas Tom
LandOfFree
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