Charge coupled device with edge aligned implants and electrodes

Details Charge coupled device with edge aligned implants and electrodes Charge coupled device with edge aligned implants and electrodes

1995-11-14

1997-06-24

Niebling, John

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257248, 438144, H01L 21265, H01L 2170, H01L 2700

Patent

active

056417004

ABSTRACT:
A fully self-aligned, charge coupled device (CCD) comprises a semiconductor substrate having implanted barrier and/or storage regions, an insulating dielectric layer disposed over the substrate, a first layer of closely spaced electrodes in self-alignment with at least one implant underneath the first electrodes, a second layer of closely spaced electrodes in self-alignment with the first electrodes and with at least one implant underneath the second electrodes also in self-alignment with the first electrodes. The process for fabricating the fully self-aligned CCD comprises the steps of first forming upon the semiconductive substrate, a uniform insulating dielectric layer; then forming a sacrificial layer upon the dielectric layer, the sacrificial layer patterned by removal of selected portions of the layer, at least one edge of the patterned sacrificial layer serving as a mask for ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming in only those regions in which the sacrificial layer was removed, a first gate electrode; then removing the sacrificial layer, thereby exposing the sidewalls of the closely spaced first gate electrode, at least one of the sidewalls serving as a mask for a second ion implantation into the semiconductor substrate, the mask optionally comprising also photoresist; then forming a first oxide layer over the exposed surface of the first gate electrode; then depositing and patterning a second gate electrode layer to form a second gate electrode disposed between portions of the first gate electrode.

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