Charge coupled device with buried zones in a semiconductor subst

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 15, 357 91, 307221D, H01L 2978, H01L 2956, G11C 1928

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active

042086680

ABSTRACT:
A CCD is disclosed having a semiconductor substrate of a first conductivity type with a plurality of electrodes serially located above one planar surface thereof, a plurality of buried doped zones of a conductivity type opposite to that of the substrate and located in a plane spaced below a surface of the substrate. The rear edge of each electrode is in line with the front edge of a buried doped zone. The front edge of the same electrode overlaps the rear end of the next succeeding buried doped zone. The upper front corner of each electrode is bevelled.

REFERENCES:
patent: 3999208 (1976-12-01), Shimizu
patent: 4032952 (1977-06-01), Ohba et al.
Sequin, "Blooming Suppression in Charge Coupled Imaging Devices", Bell System Technical Journal, vol. 51, (10/72), pp. 1923-1926.
Bankowski et al., "Charge-Coupled Device Scanner . . . ", IBM Technical Disclosure Bulletin, vol. 16, (6/73), pp. 173-174.
Shimizu et al., "Charge-Coupled Device with Buried Channels Under Electrode Gaps", Appl. Phy. Lett., vol. 22, (3/73), pp. 286-287.
Sequin et al., Charge Transfer Devices, Academic Press, N.Y., pp. 19-31.

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