Charge coupled device with a buried channel two-phase driven two

Details Charge coupled device with a buried channel two-phase driven two Charge coupled device with a buried channel two-phase driven two

1997-11-20

2000-01-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257246, 257250, H01L 27148, H01L 29768

Patent

active

060112824

ABSTRACT:
A charge coupled device of buried channel type suitable to drive the device by clock pluses having a low voltage is disclosed. Channels of the charge coupled device comprises first to third regions. The first region has a first impurity concentration. The second region has a second impurity concentration lower than the first impurity concentration. The third region has a third impurity concentration lower than the second impurity concentration. A first transfer electrode is formed on the first region. A second transfer electrode is formed on the second region.

REFERENCES:
patent: 3927468 (1975-12-01), Anthony et al.
patent: 4231810 (1980-11-01), Juntsch et al.
patent: 5227680 (1993-07-01), Nogucho et al.
Choong-Ki Kim, "Two-Phase Charge Coupled Linear Imaging Devices with Self-Aligned Implanted Barrier", IEDM Technical Digest, 1974, pp. 55-58.

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