Television – Camera – system and detail – Solid-state image sensor
Reexamination Certificate
1997-06-13
2001-05-08
Ho, Tuan (Department: 2612)
Television
Camera, system and detail
Solid-state image sensor
C348S316000
Reexamination Certificate
active
06229567
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a charge coupled device. More particularly, this invention relates to a charge coupled device enabling an image recording/reproducing medium such as a camcorder to realize a reverse image.
2. Discussion of Related Art
A reverse image is the image of which left, right, upper and lower directions are changed by regulating the angle of the LCD for use of a view finder attached to a camcorder, so that a person who is taken a picture of can directly view the screen from the position where he is.
With reference to the attached drawings, a conventional charge coupled device will be described below.
As illustrated in
FIG. 1
, the conventional charge coupled device includes: a plurality of matrix-type photo diode areas
1
formed on an image sensing area; a plurality of VCCDs
2
formed vertically to one side of each photo diode area
1
, and transmitting charges formed in the photo diode areas; an optical black area
3
formed around the image sensing area; an HCCD
4
formed on one side of each VCCD
2
and transmitting the signal charges transmitted through the VCCDs
2
in a horizontal direction; and a sensing amplifier
5
formed on one side of the HCCD
4
, sensing the transmitted charges and outputting them to outside.
A unit cell, a part of
FIG. 1
, of the above-mentioned charge coupled device is structured as follows.
As illustrated in
FIGS. 2A
to
2
C, the unit cell includes: a first p type well
7
formed on an n type semiconductor substrate
6
; a photo diode area
8
formed of a PD-N layer and a PD-P layer on the first p-type well
7
; a high concentration p type impurity diffusion area
11
formed on the photo diode area
8
excluding one side of the area
8
to which the signal charges are transferred, and therefore used as a channel stop layer; a second p type well
9
formed on the portion of the first p type well
7
where the photo diode area and high concentration p type impurity diffusion area
11
are not formed; an N type impurity diffusion area
10
formed in the second p type well
9
and used for the VCCD area; first and second polysilicon gate electrodes
12
(the first polysilicon gate electrode is not shown in
FIG. 2B
) insulated by first insulating layer
13
which is formed on the overall surface of the substrate, and formed on the n type impurity diffusion area
10
; a light blocking metal layer
14
formed on a portion other than the photo diode area
8
; a second insulating layer
15
formed on the overall surface of the substrate; a color filter layer
16
formed on the second insulating layer
15
on the photo diode area
8
, and transmitting a radiation of a specific wave; a third insulating layer
17
formed on the overall surface of the substrate including the color filter layer
16
; and a micro lens
18
formed on the third insulating layer
17
on the color filter layer
16
and thus focusing light.
Here, the first insulating layer
13
is made up with a gate insulating layer which is formed on the overall substrate before the first polysilicon gate electrode is formed, and an insulating layer formed on the second polysilicon gate electrode.
A potential profile of the thus-structured charge coupled device's photo diode area is shown in FIG.
2
C. The photo diode area
8
and its lower side are made up with the PD-P, PD-N, the first p type well, and the n type semiconductor substrate.
The PD-N area is fully depleted by the PD-P and the first p type well. Here, the highest potential of the PD-N area is the photo diode pinch-off voltage.
In
FIG. 2C
, Vsdl indicates the lowest voltage of the first p type well. Vsht is the vertical potential profile. Vofd is DC voltage applied to the n type semiconductor substrate.
A charge transmitting operation of the conventional charge coupled device will be described below.
FIG. 3
is a sectional view of the VCCD area. The first and second polysilicon gate electrodes are alternatively formed on the VCCD area. The signal charges, placed in the VCCD area under the first and second polysilicon gate electrodes to which vertical clock signals V&phgr;1, V&phgr;2 are applied at the time point T=
1
, are shifted under the first and second polysilicon gate electrodes to which the next vertical clock signals V&phgr;1, V&phgr;2 are applied at the time point T=
9
, by using the clock signal applied to the VCCD. A rising time (RT) of the clock signal applied to the VCCD area may be fast, but the falling time (FT) should not be too fast because the signal charges are not shifted in the foregoing direction, but remain or shift to the reverse direction, thereby lowering the charge transmitting efficiency.
The image recording/reproducing medium such as the camcorder using the conventional solid state device multi-functions to thereby provide the user specific services. The camcorder should provide the above-mentioned reverse image which enables the object, a people to watch the picture screen from the position where he is filmed.
However, the conventional charge coupled device displays the image in a reverse way because the transmission of the signal charge is made in one direction.
SUMMARY OF THE INVENTION
Accordingly, the present invention is directed to a charge coupled device that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
An object of the present invention is to provide a charge coupled device realizing a reverse image in the image recording/reproducing medium such as a camcorder.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, the charge coupled device having a plurality of photo diodes, a plurality of VCCDs for shifting the image charges generated in the plurality of photo diodes by the variation of the potential well,
The device further includes first and second HCCDs each formed on one side and the other side of the VCCD in parallel, for selectively transmitting the image charges transmitted from the VCCD in the opposite directions.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
REFERENCES:
patent: 5043819 (1991-08-01), Cheon et al.
patent: 5060072 (1991-10-01), Hojo et al.
patent: 5148013 (1992-09-01), Yamada
patent: 5398063 (1995-03-01), Yamana
patent: 5400071 (1995-03-01), Yamada
patent: 5757427 (1998-05-01), Miyaguchi
Choi In Kyou
Park Chan
Ho Tuan
Hyundai Electronics Industries Co,. Ltd.
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