Charge coupled device producing method

Details Charge coupled device producing method Charge coupled device producing method

2006-08-29

2006-08-29

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S144000

Reexamination Certificate

active

07098066

ABSTRACT:
A charge coupled device of the present invention includes a charge transfer region layer and a gate insulation film that are formed in the stated order on a semiconductor substrate, first gate electrodes formed at predetermined spaces on the gate insulation film, and second gate electrodes arranged between the first gate electrodes with at least silicon oxide films being interposed there between. Each silicon oxide film has constricted portions where the silicon oxide film is in contact with the gate insulation film, and electric insulation films are formed on the constricted portions so as to form sidewalls. This configuration decreases the charge transfer efficiency and increases a dielectric breakdown voltage between gate electrodes. Thus, a charge coupled device having high performance and high dielectric strength is provided.

REFERENCES:
patent: 5434097 (1995-07-01), Shin et al.
patent: 6515317 (2003-02-01), Bazan et al.
patent: 2004/0092058 (2004-05-01), Fullerton et al.
patent: 4-279036 (1992-10-01), None
patent: 5-343440 (1993-12-01), None

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