Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-01-25
1994-08-09
Ngo, Ngan Van
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257221, 257235, 257237, 257248, 377 60, 377 62, H01L 2978
Patent
active
053369106
ABSTRACT:
A charge coupled device according to the present invention, having an output terminal, for detecting an electric charge and for outputting a detection signal corresponding to the electric charge from the output terminal, comprises a semiconductor substrate having a main surface, further having a first, second and third regions in the main surface, both the first and second regions defining the third region therebetween, a charge supply formed in the vicinity of the first region, for supplying the electric charge to the first region, a first impurity formed in the first region, for transferring the electric charge to the third region, a floating gate electrode overlying the third region, coupled to the output terminal, for detecting the electric charge and outputting the detection signal corresponding to the electric charge from the output terminal in a first condition, for transferring the electric charge to the second region in a second condition, a transfer electrode overlying the second region, applied a control signal having a first or second logic levels thereto, for controlling to receive the electric charge at the time of the control signal having the first logic level, the control signal having the first logic level at the time of the floating gate electrode being in the first condition, a second impurity formed in a fourth region, the fourth region disposed in the second region and in the vicinity of the third region. Accordingly, the present invention can provide a charge coupled device of high sensitivity and high integration.
REFERENCES:
patent: 4528684 (1985-07-01), Iida et al.
Ngo Ngan Van
OKI Electric Industry Co., Ltd.
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