Charge coupled device including a slow-wave structure for provid

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307221D, 307304, H01L 2978, H03K 3353

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active

039757536

ABSTRACT:
A charge coupled device (CCD) wherein clocking or charge transfer at relatively high frequencies is obtained by the use of a slow-wave structure in the form of a metallized meander line fabricated on a relatively thin region of silicon dioxide contiguously formed on the surface of a silicon semiconductor substrate.

REFERENCES:
patent: 3778643 (1973-12-01), Jaffe
patent: 3858232 (1974-12-01), Boyle et al.
R. Bharat, "On the Feasibility of Slow-Wave-Structure Clocking of High-Frequency Charge-Coupled Devices", Tech. Rpt. Ecom-4161 (10/73) 16p NTIS AD-768786.
R. Strain, "Properties of an Idealized Traveling-Wave Charge-Coupled Device", IEEE Transactions Electron Devices, vol. Ed-19 (10/72), pp. 1119-1130.

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