Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-06-16
1993-01-26
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
35821323, 35821326, 35821329, 257249, H01L 2978, H01L 2714, H01L 3100
Patent
active
051826224
ABSTRACT:
With the CCD imager of the present invention, signal charges from the image area are transferred by plural juxtaposed read-out registers. The storage region of the read-out registers, through which electrical charges are transmitted, is narrower in width at the image area side and broader in width at the other read-out register side. By virtue of such arrangement of the storage area, there is formed a potential which becomes shallow at the side of the image area and becomes deep at the side of the other read-out registers. By such potential, signal charge transfer efficiency between the read-out registers is improved.
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patent: 4242692 (1980-12-01), Hagiwara
patent: 4513313 (1985-04-01), Kinoshita et al.
patent: 4597013 (1986-06-01), Matsumoto
patent: 4694316 (1987-09-01), Chabbal
patent: 4750042 (1988-06-01), Murayama et al.
patent: 4807037 (1989-02-01), Iesaka et al.
patent: 4987466 (1991-01-01), Shibata et al.
IEEE Journal of Solid-State Circuits, vol. SC-13, No. 1, Feb. 1978, pp. 34-51; D. Barbe et al.: "Signal processing with charge-coupled devices."
Harada Koichi
Iizuka Tetsuya
Nakamura Satoshi
Wada Kazushi
Yonemoto Kazuya
James Andrew J.
Ngo Ngan Van
Shaw, Jr. Philip M.
Sony Corporation
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