Charge coupled device image sensor having optical shielding meta

Details Charge coupled device image sensor having optical shielding meta Charge coupled device image sensor having optical shielding meta

1994-07-14

1998-03-03

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257250, 257435, H01L 27148, H01L 29768

Patent

active

057238847

ABSTRACT:
A charge coupled device (CCD) image sensor and more particularly a wiring of charge transfer electrodes of a CCD image sensor which is made suitable for improving the charge transfer efficiency of vertical charge coupled devices (VCCDs) thereof. The CCD image sensor includes: a plurality of photoelectric conversion regions for converting light incident to a semiconductor substrate into image signal charges; a plurality of VCCD regions for transmitting image signal charges generated in the plurality of photoelectric conversion regions in a vertical direction; a plurality of transfer gate electrodes for transmitting the image signal charges generated in the plurality of photoelectric conversion regions in four phases in the vertical direction; an insulation film for insulating the plurality of transfer gate electrodes; first metal layers formed over the plurality of photoelectric conversion regions and the plurality of VCCD regions for intercepting light; and a second metal layer formed over the plurality of VCCD regions for connecting between transfer gate electrodes the same clock signals applied thereto within one VCCD and shielding light incident to the VCCD region.

REFERENCES:
patent: 5210433 (1993-05-01), Ohsawa et al.
patent: 5286990 (1994-02-01), Hynccek
patent: 5399888 (1995-03-01), Nakashiba
Article entitled "A 2 Million Pixel FIT-CCD Image Sensor For HDTV Camera Systems" By M. Yamagishi, et al., Published in IEEE Transactions on Electron Devices , vol. 38, No.5, May 1991.

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