Charge coupled device image sensor and method of driving the sam

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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257250, 257435, H01L 27148, H01L 29768

Patent

active

058959440

ABSTRACT:
There is provided an imager sensor including a semiconductor substrate, a plurality of photodiode regions arranged on the semiconductor substrate in row and column directions, a plurality of charge transfer regions each disposed at a space between the photodiode regions in the row direction, the charge transfer regions transferring in the row direction signal charges generated from the photodiode regions, and an electrically conductive photoshield film covering the charge transfer regions therewith. Each of the charge transfer regions includes at least three independent transfer electrodes per a photodiode region. At least one of the three independent transfer electrodes is surrounded by the photodiode region to thereby have an isolated island shape, the rest of the transfer electrodes extend through a space between the photodiode regions in the column direction, and make electrical connection with a bus line disposed outside the semiconductor substrate. The electrically conductive photoshield film makes electrical connection with both the island-shaped transfer electrodes and the bus line. The image sensor has the less number of steps and more excellent optical characteristics than conventional ones.

REFERENCES:
patent: 5250825 (1993-10-01), Negishi et al.
patent: 5255099 (1993-10-01), Orihara
patent: 5256890 (1993-10-01), Furukawa et al.
patent: 5256891 (1993-10-01), Losee et al.
patent: 5399888 (1995-03-01), Nakashiba
patent: 5723884 (1998-03-01), Kim
"A 1/2-in 330K Progressive-Scan CCD Image Sensor with Square-Pixel" K. Nakashima et al ITE Technical Report, vol. 18, No. 67, pp. 7-12, Nov. 1994.
"A 1/3-inch 330K Square-Pixel Progressive-Scan IT-CCD Image Sensor" T. Okutani et al 1995 ITE Anual Covention, pp. 93-94.

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