Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1993-06-11
1994-09-20
Van Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257233, 257249, 257445, 348299, H01L 2978, H01L 2714, H01L 3100
Patent
active
053492161
ABSTRACT:
A CCD image sensor comprising: a semiconductor substrate of a first conductivity type connected to a ground; an impurity region of a second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type, to serve as a blooming prevention layer; an impurity region of the first conductivity type formed in the surface of the semiconductor substrate, so that it encloses the impurity region of the second conductivity type serving as a blooming prevention layer, to serve as a potential barrier layer; an impurity region of the second conductivity type formed in the surface of the semiconductor substrate of the first conductivity type so that it encloses the impurity region of the first conductivity type serving as a potential barrier layer, to serve as a light receiving region; an insulation film which is formed on the surface of the semiconductor substrate of the first conductivity type and has contact holes at both edges of the impurity region of the second conductivity type, serving as a blooming prevention layer; silicide films filled in the contact holes; and a light shield conductor film which is formed on the surface of the remaining insulation film, except for a portion between the silicide films and the surfaces of the silicide films, and is connected to a voltage source.
REFERENCES:
patent: 4831426 (1989-05-01), Kimata et al.
patent: 4982252 (1991-01-01), Matsunaga
patent: 5118631 (1992-06-01), Dyck et al.
patent: 5238864 (1993-08-01), Maegawa et al.
patent: 5288656 (1994-02-01), Kusaka et al.
Lee Seo K.
Shinji Uja
Gold Star Electron Co. Ltd.
Ngo Ngan Van
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