Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-09-19
1998-12-01
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257231, 257233, 257291, 257297, 257432, 257435, H01L 27148, H01L 29768, H01L 31113, H01L 310232
Patent
active
058442642
ABSTRACT:
A charge-coupled device image sensor includes a substrate, a buried channel region of a first conductivity type, formed in the substrate to a predetermined depth, for transferring signal charges, a first high concentration impurity region of a second conductivity type, formed in the substrate adjacent to the buried channel region, forming a channel stop, a first surface channel region of the second conductivity type, formed on the buried channel region, for transferring dark current charges, a second high concentration impurity region of the first conductivity type, formed on the first high concentration impurity region, for removing dark current charges from the surface channel region, and a second surface channel region of the second conductivity type formed to a predetermined depth in the substrate between the second high concentration impurity region and the first surface channel region.
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LG Semicon Co. Ltd.
Munson Gene M.
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