Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-03-15
1996-11-26
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257243, 257432, H01L 2978, H01L 2714
Patent
active
055788424
ABSTRACT:
A charge coupled device (CCD) image sensor and more particularly a wiring of charge transfer electrodes of a CCD image sensor which is made suitable for improving the charge transfer efficiency of vertical charge coupled devices (VCCDs) thereof. The CCD image sensor includes: a plurality of photoelectric conversion regions for converting light incident to a semiconductor substrate into image signal charges; a plurality of VCCD regions for transmitting image signal charges generated in the plurality of photoelectric conversion regions in a vertical direction; a plurality of transfer gate electrodes for transmitting the image signal charges generated in the plurality of photoelectric conversion regions in four phases in the vertical direction; an insulation film for insulating the plurality of transfer gate electrodes; first metal layers formed over the plurality of photoelectric conversion regions and the plurality of VCCD regions for intercepting light; and a second metal layer formed over the plurality of VCCD regions for connecting between transfer gate electrodes the same clock signals applied thereto within one VCCD and shielding light incident to the VCCD region.
REFERENCES:
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 4963983 (1990-10-01), Kohno et al.
LG Semicon Co. Ltd.
Monin, Jr. Donald L.
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