Charge coupled device image sensor

Details Charge coupled device image sensor Charge coupled device image sensor

1992-06-22

1994-02-15

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257224, 257233, 257250, H01L 29796, H01L 2714, H01L 3100

Patent

active

052869881

ABSTRACT:
The present invention provides a CCD image sensor capable of suppressing the anomalous increase of the quantity of electric charges to be dealt with by sensor elements when a large quantity of light falls thereon without reducing the quantity of electric charges to be dealt with by vertical transfer registers and without increasing the amplitude of a pulse to be applied to the substrate when an electronic shutter operation is performed. The CCD image sensor is provided with sensor elements (1) of a HAD construction each having a hole accumulating layer (13) and arranged in vertical and horizontal rows, and heavily doped HCS regions (19) of the same type of conduction as that of the hole accumulating layers (13), formed in areas between the adjacent sensor elements of each vertical row to secure passages having a sufficient capacity for holes produced by photoelectric conversion so that the resistance against the hole current is reduced.

REFERENCES:
patent: 4518978 (1985-05-01), Takeshita
patent: 4935794 (1990-06-01), Miyatake
patent: 5132762 (1992-07-01), Yamada
patent: 5181093 (1993-01-01), Kawaura
patent: 5191399 (1993-03-01), Maegawa et al.

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