Charge coupled device having two-layer electrodes and method of

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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257248, H01L 29768

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active

059145064

ABSTRACT:
A charge coupled device has a plurality of N-diffused regions and a plurality of N.sup.- diffused regions arranged alternately along a charge transfer channel. A first electrode and second electrode overlying each N-diffused region and N.sup.- -diffused region form a pair of electrodes, four of which form a group of electrodes iteratively appearing along the charge transfer channel. Each first pair and each third pair are connected to a first signal line and second signal line, respectively, which receive two-phase driving clock signals, while each second pair and fourth pair are connected to a fixed potential line maintained at a middle potential between the high level and low level of the driving signals. A high-speed transfer of signal charges is obtained in the two-phase type charge coupled device.

REFERENCES:
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patent: 4709380 (1987-11-01), Itoh
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patent: 5402459 (1995-03-01), Hynecek
patent: 5521405 (1996-05-01), Nakashiba
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An Overlapping Electrode Buried Channel CCD; D. M. Erb et al. International Electron Devices Meeting, Dec. 1973, pp. 24-26.
Two-Phase Charge Coupled Linear Imaging Devices with Self-Aligned Implanted Barrier; Choong-Ki Kim ; International Electron Devices Meeting, Dec. 1974, pp. 55-58.

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