Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1990-11-29
1994-11-29
Ngo, Ngan Van
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257240, 257243, 257249, H01L 2978
Patent
active
053692934
ABSTRACT:
A charge-coupled device has a series register (A) having charge storage electrodes (3a) for defining charge storage wells and charge transfer electrodes (3b) for transporting charge between the charge storage wells and a parallel section (C) having channels (1a,1b) extending transversely of the series register (A). The parallel section (C) has charge storage electrodes (11a,12a,13a . . . Na) spaced apart along the channels, (1a,1b) to define a respective charge storage well with each channel to provide a respective row of charge storage wells extending transversely of the channels and has charge transfer electrodes (12b . . . Nb) for transferring charge between adjacent rows of charge storage wells, and a transfer gate (T1) for transferring charge between the series register (A) and an adjacent row of charge storage wells defined by the channels (1a,1b) and a first charge storage electrode (11a) of the parallel section. The first charge storage electrode (11a) of the parallel section (C) is shaped so that, at least over each channel (1a,1b), the first charge storage electrode (11a) is wider than succeeding charge storage electrodes (12a, . . . Na) of the parallel section (C).
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patent: 4669100 (1987-05-01), Slotboom et al.
patent: 4696021 (1987-09-01), Kawahara et al.
Schlig, "A TDI Charge-Coupled Imaging Device for Page Scanning", Feb. 1986, pp. 182-186.
Biren Steven R.
Ngo Ngan Van
U.S. Philips Corporation
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