Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1996-12-10
1998-10-13
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, H01L 27148, H01L 29768
Patent
active
058215743
ABSTRACT:
A charge-coupled device includes a first P-type well formed in an N-type semiconductor substrate, a second P-type well formed repeatedly the first P-type well region, a charge-transfer region (BCCD) formed within the second P-type well region, an N-type photodiode region (PDN) formed in the upper portion of the first P-type well so as to be isolated from the charge-transfer region, a first high concentration P-type photodiode region (first PDP.sup.+ region) formed in the upper surface of the N-type photodiode region excluding the charge-transfer region and serving as a charge-isolating layer, first and second poly-gates formed repeatedly on the charge-transfer region, and a second high concentration self aligned P-type photodiode region (second PDP.sup.+ region) formed in the surface of the first high concentration P-type photodiode region. The charge-isolating region is thin to extend the potential pocket of each light-conversion PDN region.
REFERENCES:
patent: 5514887 (1996-05-01), Hokari
patent: 5619049 (1997-04-01), Kim
LG Semicon Co. Ltd.
Ngo Ngan V.
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