Charge-coupled device having channel region with alternately cha

Details Charge-coupled device having channel region with alternately cha Charge-coupled device having channel region with alternately cha

1987-02-09

1989-02-28

Munson, Gene M.

Electrical pulse counters, pulse dividers, or shift registers: c

Counting or dividing in incremental steps

Beam type tube

377 58, H01L 2978, G11C 1928

Patent

active

048090484

ABSTRACT:
A charge-coupled device comprises a p type silicon substrate (130), a plurality of n type impurity regions (121) of a high impurity concentration, a plurality of n type impurity regions (140) of a low impurity concentration, a silicon oxide film (150) for defining a channel region (10), a gate oxide film (110), a plurality of gate electrodes (21, 31, 41, 51, 22, 32, 42 and 52) and clock bus lines (70, 80, 90 and 100) for applying a clock signal to the respective gate electrodes. The n type impurity regions (121) and (140) are formed alternately in the channel region (10) along a direction perpendicular to the charge transfer direction, whereby the potential in the channel region (10) changes in the above described perpendicular direction. The change of the potential causes a strong electric field in the channel region (10) in the above described perpendicular direction, which serves to prevent carriers from freezing to an impurity level at a low temperature. Thus, the transfer efficiency of carriers is improved.

REFERENCES:
patent: 3986197 (1976-10-01), Ablassmeier
patent: 4362575 (1982-12-01), Wallace
patent: 4667213 (1987-05-01), Kosonocky
"The Buried Channel Charge Coupled Device", R. H. Walden et al., Bell System Technical Journal, vol. 51, 1972, pp. 1635-1640.
"Low-Temperature Characteristics of Buried-Channel Charge-Coupled Devices", Masafumi Kimata et al., Japanese Journal of Applied Physics, vol. 22, No. 6, Jun. 1983, pp. 975-980.

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