Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-03-26
1993-06-29
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257222, 257224, 257231, 257243, H01L 2978, H01L 2714, H01L 3100
Patent
active
052237273
ABSTRACT:
A charge-coupled device includes a parallel section of parallel channels which are situated next to one another and are mutually separated by limitation zones, and a single readout register coupled thereto. The readout register is provided with clock electrodes in a multi-layer wiring system, the electrodes of the upper layer belonging to a common phase and being constructed as a continuous track which extends over the other electrodes. In the bottom wiring layer, electrodes are formed which are each associated with a limitation zone between the parallel channels and which have a length which is at most equal to the width of the limitation zones, and which also belong to a common phase, so that narrow-channel effects are avoided. The invention is of particular importance for CCD image sensors.
REFERENCES:
patent: 4246591 (1981-01-01), Kosonocky et al.
patent: 4987466 (1991-01-01), Shibata et al.
"A 2/3 1188(H) 484(V) Frame-Transfer CCDE For ESP and Movie Mode" Bosiers et al. I.E.D.M. Washington, Dec. 1988 pp. 70-73.
Biren Steven R.
James Andrew J.
Ngo Ngan Van
U.S. Philips Corp.
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