Charge coupled device gate structure having narrow effective gap

Details Charge coupled device gate structure having narrow effective gap Charge coupled device gate structure having narrow effective gap

1995-06-19

1997-02-25

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257249, 257250, 257295, 257310, 257448, H01L 27148

Patent

active

056061870

ABSTRACT:
A CCD structure including high resolution pixels. The gate electrodes of the CCD are separated by gaps in the order of 0.6 .mu.m which are made to look smaller than their physical size by the use of dielectric filler material in the gaps. The dielectric filler material has a relatively high dielectric constant which is relatively large for the clock frequencies utilized but may be relatively low for optical frequencies. The dielectric constant of the dielectric filler material is typically greater than 20 and is selected from materials such as tantalum oxide, zirconium oxide, barium titanate and barium strontium titanate.

REFERENCES:
patent: 5442207 (1995-08-01), Jeong

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