Patent
1990-12-14
1992-01-21
James, Andrew J.
357 30, 357 49, 357 55, H01L 2978, H01L 2714, H01L 2906
Patent
active
050831739
ABSTRACT:
Signal charge conveying regions are made as oblong depletion regions which are formed in operation state along and at the vicinity of side walls of a trench or groove in a seimconductor imaging device, thereby improving resolution power, dynamic range, sensitivity and S/N characteristics are improved.
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P. K. Weimer, Image Sensors for Solid State Cameras, pp. 181-225.
Carlo H. Seqin and Michael F. Tompsett, Charge Transfer Devices, Advances in Electronics and Electron Physics, pp. 7-15, 42-47, 152-165.
Terakawa Sumio
Yamada Takahiro
James Andrew J.
Matsushita Electric - Industrial Co., Ltd.
Matsushita Electronics Corporation
Ngo Ngan Van
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