Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-07-31
1993-08-17
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, H01L 2978, H01L 2714, H01L 3100
Patent
active
052371905
ABSTRACT:
A charge-coupled-device image sensor includes first, second and third linear array imagers, first, second and third horizontal charge-coupled-devices, first, second and third transfer gates and first and second vertically arranged charge-coupled-devices. The first transfer gate is operated so as to transfer electrons from the first linear array imager to the first horizontal charge-coupled-device. The third transfer gate, the first and second vertically arranged charge-coupled-devices and the second horizontal charge-coupled-device are operated so as to transfer electrons from the third linear array imager to the third horizontal charge-coupled-device. The second and third transfer gates and the first vertically arranged charge-coupled-device are operated after electrons from the third linear array imager have been transferred to the third horizontal charge-coupled-device so as to transfer electrons from the second linear array imager to the second horizontal charge-coupled-device.
REFERENCES:
patent: 4336556 (1982-06-01), Sekine et al.
patent: 4744057 (1988-05-01), Descure et al.
patent: 4928158 (1990-05-01), Kimata
Choi Clarence
Wu Liang-Chung
Hualon Microelectronics Corporation
James Andrew J.
Ngo Ngan Van
Pfund Charles E.
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