Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-04-05
1993-01-26
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
377 60, 377 62, 333165, 333138, 35821319, 35821324, 35821331, 257233, 257241, 257242, 257245, H01L 2978, H01L 2714, H01L 3100
Patent
active
051826232
ABSTRACT:
Described is a new high performance CCD image sensor technology which can be used to build a versatile image sensor family with the sensors that have high resolution and high pixel density. The described sensor architectures are based on a new charge super sweep concept which was developed to overcome such common problems as blooming and the image smear. The charge super sweep takes place in very narrow vertical channels located between the photosites similar to the Interline Transfer CCD devices. The difference here is that the charge is never stored in these regions for any significant length of time and is swept out using a new resistive gate traveling wave sweeping technique. The charge super sweep approach also allows the fast charge transfer of several lines of data from the photosites located anywhere in the array into the buffer storage during a single horizontal blanking interval.
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Cole Troy J.
Donaldson Richard L.
James Andrew J.
Kesterson James C.
Ngo Ngan Van
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