Charge-coupled device (CCD) imager and method of operation

Facsimile and static presentation processing – Facsimile – Specific signal processing circuitry

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357 30, 35821319, 377 58, 377 60, 377 61, 377 62, 377 63, H01L 2978, H01L 2714, H01L 3100

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active

050517970

ABSTRACT:
A charge-coupled imager includes in a substrate of a semiconductor material a plurality of spaced photodetectors arranged in a line. The photodetectors are each of a type that can be completely depleted. A suitable photodetector is a pinned photodiode. A separate accumulation region is contiguous with one side of each of the photodetectors. A potential is applied to each accumulation region which forms an accumulation well therein which is lower than that in its respective photodiode so that charge carriers generated in the photodiode will continuously flow into the accumulation region. An anti-blooming drain is provided adjacent each accumulation region with the potential barrier between the anti-blooming drain and the accumulation region being below the potential well in the photodiode so that when the accumulation region fills with charge carriers to the level of the potential barrier any additional charge carriers will overflow into the anti-blooming drain. This maintains the level of the potential well in the accumulation region below that in the photodiode to allow the continuous flow of charge carriers from the photodiode into the accumulation region. A CCD shift register extends along the line of accumulation region and has a transfer gate which allows the charge carriers in the accumulation regions to be transferred into the shift register.

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"The Pinned Photodiode for an Interline-Transfer CCD Image Sensor" by B. C. Burkey et al., published in the IEDM Technical Digest, 1984, pp. 28-31.

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