Charge coupled device (CCD) having high transfer efficiency at l

Details Charge coupled device (CCD) having high transfer efficiency at l Charge coupled device (CCD) having high transfer efficiency at l

1992-12-08

1993-08-31

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

2571831, H01L 29796

Patent

active

052411990

ABSTRACT:
A charge coupled device having a layer of a semiconductor material on a surface of a substrate body of a semiconductor material. The layer is of a material which can be epitaxially deposited on the body with good crystalline quality. The material of the layer has a conduction band and/or valence band which is different from that of the body so as to provide a discontinuity in the energy level of the conduction band and/or valence band at the junction of the layer and the body during the operation of the charge coupled device. At least one electrode is over and insulated from the layer. The discontinuity in the conduction band and/or valence band creates a well in which photogenerated charge is collected.

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patent: 5047090 (1991-09-01), Hayashi et al.

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