Charge-coupled device and solid-state imaging device

Details Charge-coupled device and solid-state imaging device Charge-coupled device and solid-state imaging device

1991-11-25

1993-08-31

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257222, 257225, 257229, 257236, 257239, 257258, H01L 2714, H01L 2976

Patent

active

052411982

ABSTRACT:
A charge-coupled device comprises transfer gate electrodes separated from a substrate by a multi-layer insulating film, and gate electrodes of MIS transistors separated from the substrate by a single layer insulating film. The multilayer insulating film comprising at least a lower silicon oxide layer of 10 nm to 200 nm thickness and an upper silicon nitride layer of 10 nm to 100 nm thickness. Since each of the gate insulating films of the MIS transistors is the same layer as the lower silicon oxide layer, there occurs no degradation in the transistor characteristics due to the surface states or the trapping states present within the silicon nitride layer.

REFERENCES:
patent: 4236831 (1980-12-01), Hendrickson
patent: 4584697 (1986-04-01), Hazendonk et al.
patent: 4695860 (1987-09-01), Blanchard et al.
patent: 4742027 (1988-05-01), Blanchard et al.
patent: 4746622 (1988-05-01), Hawkins et al.

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