Charge-coupled device and process of fabrication thereof

Details Charge-coupled device and process of fabrication thereof Charge-coupled device and process of fabrication thereof

1991-10-08

1993-02-23

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257222, 257238, 512555, 512538, H01L 2976, H01L 2714

Patent

active

051894998

ABSTRACT:
A charge-coupled device has a multi-layer structure insulating layer is formed beneath a transfer electrode, floating electrodes and an electrode adjacent the floating electrodes so that pin hole phenomenon in a charge transfer section of the charge coupled device can be successfully prevented. On the other hand, a sole-layer structure insulating layer is formed beneath a gate electrode of a peripheral component so that a threshold voltage of the gate electrode of the peripheral component can be successfully controlled at a desired value.

REFERENCES:
patent: 4236831 (1980-12-01), Hendrickson
patent: 4538287 (1985-08-01), Roberts et al.
patent: 4574468 (1986-03-01), Slotboom et al.
patent: 4584697 (1986-04-01), Hazendonk et al.
patent: 4614960 (1986-09-01), Bluzer
patent: 4746622 (1988-05-01), Hawkins et al.
patent: 4974240 (1990-11-01), Suzuki et al.

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