Charge coupled device and method of producing the same

Details Charge coupled device and method of producing the same Charge coupled device and method of producing the same

1992-02-03

1993-06-22

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257250, H01L 2978, H01L 2702

Patent

active

052218520

ABSTRACT:
A charge coupled device (CCD) has a charge storage region and a potential barrier region. The CCD includes a first layer made of a first conductivity type semiconductor, a second layer made of a second conductivity type semiconductor and provided on the first layer, where the first and second conductivity types are mutually opposite types selected from n-type and p-type semiconductors, a third layer made of a first conductivity type semiconductor, impurity diffusion regions provided in at least a surface part of the third layer and having an impurity density higher than that of the third layer, a first gate electrode provided on the third layer between two mutually adjacent impurity diffusion regions, and a second gate electrode provided on each impurity diffusion region of the third layer. The impurity diffusion region forms the charge storage region of the CCD and the third layer between the two mutually adjacent impurity diffusion regions forms the potential barrier region of the CCD.

REFERENCES:
patent: 5103278 (1992-04-01), Miwada

Affiliated with

Also associated with

Rating

Charge coupled device and method of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charge coupled device and method of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge coupled device and method of producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1443040