Charge-coupled device and method of fabrication of the device

Details Charge-coupled device and method of fabrication of the device Charge-coupled device and method of fabrication of the device

1974-03-12

1976-02-03

Edlow, Martin H.

H01L 2978

Patent

active

039368610

ABSTRACT:
A charge-coupled device in which the storage and tranfer of information in the form of charges consisting of minority carriers are carried out with only two clocks. The device comprises a doped semiconductor substrate coated with an insulating thin film carrying a linear series of conductive electrodes. A variably doped surface region of the substrate creates a potential barrier for the minority carriers upstream of a charge-storage region. The same value of potential is fixed respectively for the odd-numbered electrodes and for the even-numbered electrodes, these values being modified in cycles so as to transfer the charge from each alternate electrode to one of the adjacent electrodes.
A method of fabrication of the device consists in forming an insulating film and an assembly of conductive electrodes on a semiconductor substrate and in ion implantation by means of an ion beam in order to increase the doping of the substrate beneath one edge of the electrodes.

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