Charge-coupled device and method of fabricating the same

Details Charge-coupled device and method of fabricating the same Charge-coupled device and method of fabricating the same

2006-01-17

2006-01-17

Kang, Donghee (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S246000, C257S247000, C257S248000, C257S250000, C438S587000, C438S588000

Reexamination Certificate

active

06987294

ABSTRACT:
A charge-coupled device capable of attaining excellent performance with a single-layer gate electrode structure is obtained. This charge-coupled device, having a single-layer gate electrode structure, comprises a gate insulator film formed on a semiconductor substrate, a plurality of partitions, consisting of an insulator, formed on the gate insulator film, and concave gate electrodes, arranged between adjacent ones of the partitions, having side surfaces formed along side portions of the partitions. Thus, when the partitions are formed with a width of not more than the minimum critical dimension of lithography, the interval between the adjacent gate electrodes is not more than the minimum critical dimension of lithography.

REFERENCES:
patent: 4097885 (1978-06-01), Walsh
patent: 4173765 (1979-11-01), Heald et al.
patent: 4672645 (1987-06-01), Bluzer et al.
patent: 4695860 (1987-09-01), Blanchard et al.
patent: 5943556 (1999-08-01), Hatano et al.
patent: 6689661 (2004-02-01), Durcan et al.
patent: 05-243177 (1993-09-01), None
patent: 11-204776 (1999-07-01), None
patent: 2004-508727 (2004-03-01), None
patent: 2002-59684 (2002-07-01), None
patent: WO 02/21573 (2002-03-01), None

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