Charge coupled device and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device

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257243, 257246, 257248, 257250, H01L 27148, H01L 29768

Patent

active

060435232

ABSTRACT:
A charge coupled device is disclosed including: a well formed in a substrate, the well having a conductivity opposite to that of the substrate; a first conductivity type of BCCD region formed on the well; a first lightly doped impurity region formed in a predetermined portion of the first conductivity type of BCCD region; a heavily doped impurity region formed in a predetermined portion of the BCCD region, the heavily doped impurity region having a predetermined distance from the first lightly doped impurity region; a second lightly doped impurity region formed between the first lightly doped impurity region and heavily doped impurity region; a first polysilicon gate formed over a portion of the BCCD region, placed between the first lightly doped impurity region and heavily doped impurity region; and a second polysilicon gate formed over the first lightly doped impurity region. The realization of high speed CCD and simplification of the circuit configuration can be obtained by using one-phase clocking.

REFERENCES:
patent: 5289022 (1994-02-01), Iizuka et al.
patent: 5401679 (1995-03-01), Fukusho

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