Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-06-21
1997-07-29
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257223, 257230, 257240, 257243, H01L 27148, H01L 29768
Patent
active
056524420
ABSTRACT:
The invention relates to a charge coupled device with a buried channel in which charge is detected by a MOST (MOS transistor) incorporated in the channel and having a surface channel of the conductivity type opposed to that of the charge coupled device. The source zone is situated in the centre of the CCD channel and is formed simultaneously with the channel bounding zone. The gate electrode comprises two portions situated on either side of the source zone, which portions, seen at the surface, do not overlap the source and drain zones. Below the gate electrode, a zone is formed of the same conductivity type as but with a higher doping than the CCD channel, which zone forms a charge storage region for the charge packet to be read out during the reading-out process. The source and drain zones are connected to the MOST channel region by means of extensions. The detector can be manufactured in a self-aligned manner, has a high charge storage capacity, a good noise behaviour, and a high speed.
REFERENCES:
patent: 4074302 (1978-02-01), Brewer
patent: 4984045 (1991-01-01), Matsunaga
patent: 5223725 (1993-06-01), Miwada
patent: 5229630 (1993-07-01), Hamasaki
patent: 5357128 (1994-10-01), Shinji
"A highly sensitive on-chip charge detector for CCD area image sensor" by Matsunaga et al, IEEE Journal of Solid-State Circuits, vol. 26, No. 4, Apr. 1991, pp. 652-656.
Biren Steven R.
Ngo Ngan V.
U.S. Philips Corporation
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