Charge-coupled device

Details Charge-coupled device Charge-coupled device

1975-01-30

1978-08-29

Wojciechowicz, Edward J.

357 89, H01L 2978

Patent

active

041107772

ABSTRACT:
The invention relates to a charge-coupled device in which the charge transport takes place in the form of majority charge carriers via the bulk of a surface layer of the first conductivity type which forms a p-n junction with a substrate of the second conductivity type. The comparatively thick and high-ohmic surface layer has a comparatively thin low-ohmic buried zone of the first conductivity type which adjoins the said p-n junction. The buried zone forms a buffer layer against the depletion zone belonging to the p-n junction. Without detrimentally influencing the transport properties, a low-ohmic substrate may be used, which has important advantages in particular with respect to the leakage currents.

REFERENCES:
patent: 3792322 (1974-02-01), Boyle et al.
patent: 3796932 (1974-03-01), Amelio et al.
patent: 3852799 (1974-12-01), Walden

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